机译:热载流子作用下金属诱导的横向结晶n型多晶硅TFT的热泄漏电流机理
School of Information Science and Technology, East China Normal University, Shanghai 200241, People's Republic of China Department of Electronics and Information Engineering, Suzhou Vocational University, Suzhou 215104, People's Republic of China;
thermally generated (tc) leakage current; hot-carrier (hc) stress; thin film transistors (tfts); low-temperature polycrystalline silicon; (ltps); mechanisms; reliability;
机译:热载流子作用下金属诱导的横向结晶氢化n型多晶硅TFT的场增强产生漏电流
机译:电应力对金属诱导的横向结晶p沟道多晶硅TFT漏电流的影响
机译:减少具有双栅和多个纳米线通道的金属诱导的横向结晶多晶硅TFT中的泄漏电流
机译:有或没有氢化作用的n型金属诱导的横向结晶的多晶硅TFT的器件退化比较
机译:通过晶粒增强技术形成的多晶硅薄膜晶体管的建模:金属诱导的横向结晶。
机译:镍金属诱导的横向结晶结晶多晶硅膜的结构表征
机译:四端聚-SI TFT对DC和AC热载体降解抑制机制的TCAD分析