首页> 外文期刊>Journal of materials science >Influence of Al_2O_3/SiO_2 ratio on the microstructure and properties of low temperature co-fired CaO-Al_2O_3-SiO_2 based ceramics
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Influence of Al_2O_3/SiO_2 ratio on the microstructure and properties of low temperature co-fired CaO-Al_2O_3-SiO_2 based ceramics

机译:Al_2O_3 / SiO_2比对低温共烧CaO-Al_2O_3-SiO_2基陶瓷显微组织和性能的影响

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摘要

In this work, in order to obtain the materials for low temperature co-fired ceramics applications, CaO-Al_2O_3-SiO_2 (CAS) based ceramics were synthesized at a low sintering temperature of 900 ℃. The influences of Al_2O_3/ SiO_2 ratio on the microstructure, mechanical, electrical and thermal properties were studied. According to the X-ray diffractomer and scanning electron microscopy results, the addition of the Al_2O_3 is advantageous for the formation of the desired materials. Anorthite(CaAl_2Si_2O_8) is the major crystal phase of the ceramics, and the SiO_2 phase is identified as the secondary crystal phase. No new crystal phase appears in the ceramics with the increasing Al_2O_3 content. More or less Al_2O_3 addition would all worsen the sintering, mechanical and dielectric properties of CAS based ceramics. The ceramic specimen (Al_2O_3/SiO_2 = 20/18.5) sintered at 900 ℃ shows good properties: high bending strength = 145 MPa, low dielectric constant = 5.8, low dielectric loss = 1.3 × 10~(-3) and low coefficient of thermal expansion value = 5.3 × 10~(-6) K~(-1). The results indicate that the prepared CAS based ceramic is one of the candidates for low temperature co-fired ceramic applications.
机译:在这项工作中,为了获得用于低温共烧陶瓷的材料,在900℃的低烧结温度下合成了CaO-Al_2O_3-SiO_2(CAS)基陶瓷。研究了Al_2O_3 / SiO_2配比对组织,力学性能,电性能和热性能的影响。根据X射线衍射和扫描电子显微镜的结果,Al_2O_3的添加对于形成所需材料是有利的。钙长石(CaAl_2Si_2O_8)是陶瓷的主晶相,SiO_2被确定为次生晶相。随着Al_2O_3含量的增加,陶瓷中不会出现新的晶相。 Al_2O_3的添加或多或少都会使CAS基陶瓷的烧结,机械和介电性能恶化。在900℃下烧结的陶瓷样品(Al_2O_3 / SiO_2 = 20 / 18.5)具有良好的性能:高弯曲强度= 145 MPa,低介电常数= 5.8,低介电损耗= 1.3×10〜(-3)和低热系数扩展值= 5.3×10〜(-6)K〜(-1)。结果表明,制备的CAS基陶瓷是低温共烧陶瓷应用的候选材料之一。

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  • 来源
    《Journal of materials science》 |2014年第10期|4206-4211|共6页
  • 作者单位

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China;

    School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, 610054 Chengdu, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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