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机译:GaAs衬底取向错误对起伏的成分阶梯式AIGalnAs缓冲液特性的影响
Changzhou Coll Informat Technol, Inst Elect, 22 Middle Mingxin Rd, Wujin Dist 213164, Changzhou, Peoples R China;
Changzhou Coll Informat Technol, Basic Courses Dept, 22 Middle Mingxin Rd, Wujin Dist 213164, Changzhou, Peoples R China;
Huzhou Univ, Coll Informat Engn, 759,East 2nd Rd, Huzhou 313000, Peoples R China;
Changzhou Coll Informat Technol, Inst Elect, 22 Middle Mingxin Rd, Wujin Dist 213164, Changzhou, Peoples R China;
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nano Devices & Applicat, Suzhou 215123, Peoples R China;
机译:通过使用成分调制的逐步分级AIGalnAs缓冲液改善了GaAs衬底上InP层的质量
机译:GAAS基板上的组成阶梯分级藻类缓冲器的制造与仿真Galnas太阳能电池
机译:基质错误化对GaAs(100)种植的外延层的组成和结构和光致发光性质的影响
机译:逐步分级的In
机译:植物区系,组成和边缘深度会影响沿小寒流的缓冲区和野火边缘。
机译:GaAs(001)上生长的高质量100 nm厚InSb膜具有InxAl1-xSb连续渐变缓冲层的基板
机译:0.6-eV带隙In0.69Ga0.31As热光电器件,具有成分起伏不定的阶梯式InAsyP(1-y)缓冲液
机译:Gaas(001)衬底取向偏向(111)对In(x)Ga(1-x)as / Gaas光学性质的影响