Structural and optical properties of 0.98 um InGaAs/InGaAsP strained-compensated multiple quantum well structures grown by gas-source molecular beam epitaxy

摘要

The effects of growth temperature on the structural and optical properties of gas-source molecular beam epitaxy grown 0.98 um InGaAs/InGaAsP strain-compensted multiple quantum well structures were studied by transmission electron microscopy (TEM), double crystal X-ray diffraction and photoluminescence measurements. It was found that high quality of qunatum well structrures can be obtained at a lower growth temperature. A higher growth temperatrure caused an immiscible growth for the InGaAsP alloy from the observation of the TEM images. As a result, the optical and structural quality of the quantum well structure was drastically degraded.