Study of InGaAsP/InP multiple quantum wells grown by solid source molecular beam epitaxy

摘要

n-type strained InGaAsP/InP multiple quantum well (MQW) structures grown by solid source molecular beam epitaxy were characterized using high resolution x-ray diffraction and low temperature photoluminescence, and the effects of well width and doping density in the wells on the quality of the MQW structures were studied. Heavy Si doping in the wells degrades abruptness and causes more diffusion at the well-barrier interfaces. The PL results show the changes of peak energy and linewidth of the spectra with the doping concentration in the wells, which can be explained by band bending at the well-barrier interfaces and disordering caused by heavy Si doping. In addition, the samples with wider wells show a higher intensity and a slightly narrower zeroth-order peak, due likely to the longer growth time.