Microstructure of interfacial HgTe/CdTe superlattice layers for growth of HgCdTe on CdZnTe (211)B substrates

摘要

Transmission electron microscopy has been used to characterize the microstructure of HgTe/CdTe superlattices (SLs) grown by molecular beam epitaxy on CdZnTe(211) B substrates. The purpose of these intermediate layers was to improve the quality of subsequent HgCdTe (MCT) epilayers intended for infrared detectors. The observations confirmed that the SLs smoothed out the surface roughness of the substrate, and showed that threading dislocations were prevented from reaching the MCT epilayers. High-quality growth of MCT on CdZnTe using the HgTe/CdTe interfacial layers has been demonstrated.