Minority-carrier lifetime optimization in silicon MOS devices by intrinsic gettering

摘要

The effect of intrinsic gettering on the minority-carrier generation lifetime (τ_g) of Si MOS devices fabricated on CZ and HMCZ Si substrates of varying interstitial oxygen concentration was investigated. Wafers cut from 57 mm diameter Si ingots grown under a horizontla magnetic field of B=0 to B=5.4 kG were divided into three groups according to the initial interstitial oxygen concentration: low oxygen (8-12 ppma (New ASTM)), medium oxygen (13-17 ppma), and high oxygen (18-20 ppma).