TCAD Ready Density Gradient Calculation of Channel Charge for Strained Si/Strained Si_(1-x)Ge_x Dual Channel pMOSFETs on (001) Relaxed Si_(1-y)Ge_y

摘要

In this paper, we study the charge distribution in the inversion layer of a strained Si/strained Si_(1-x)Ge_x dual channel pMOSFET on relaxed Si_(1-y)Ge_y. First, the size quantization of the two-dimensional hole gas (2 DHG) in the strained layers is discussed based on the Schroedinger equation with a complete description of the valence band structure using the k · p-method (KPSE). Second, the heterojunction valence band offsets needed for modeling in commercial TCAD device simulators are estimated for the first time from the results of the KPSE.