New Fabrication Of A Strained Si/si_(1-y)ge_y Dual Channel On A Relaxed Si_(1-x)ge_x Virtual Substrate Using A Ge-rich Layer Formed By Oxidation

摘要

This paper presents a new method of forming a Si/SiGe dual channel on a Si_(0.8)Ge_(0.2) virtual substrate. Generally, in a CMOS process using a Si/SiGe dual channel, due to several processes involving ion-implantation, annealing and dry-etching after the deposition of the Si/SiGe dual channel, the surface can be damaged, leading to reduced electrical properties. However, if the dual channel is formed during a specific stage of the CMOS process, the defects of the dual channel can be reduced and the thermal stability will be excellent. Therefore, in this paper, a method for minimizing the defects of the dual channel is presented. This method uses the segregation of the Ge in the oxidation process of a SiGe. A Si/ SiGe dual channel formed using this method achieved results that were identical to a dual channel deposited using the chemical vapor deposition (CVD) method.