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Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing
Formation of strained Si channel and Si1-xGex source/drain structures using laser annealing
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机译:利用激光退火形成应变Si沟道和Si 1-x Sub> Ge x Sub>源极/漏极结构
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摘要
A process for forming a strained channel region for a MOSFET device via formation of adjacent silicon-germanium source/drain regions, has been developed. The process features either blanket deposition of a silicon-germanium layer, or selective growth of a silicon-germanium layer on exposed portions of a source/drain extension region. A laser anneal procedure results in formation of a silicon-germanium source/drain region via consumption of a bottom portion of the silicon-germanium layer and a top portion of the underlying source/drain region. Optimization of the formation of the silicon-germanium source/drain region via laser annealing can be achieved via a pre-amorphization implantation (PAI) procedure applied to exposed portions of the source/drain region prior to deposition of the silicon-germanium layer. Un-reacted top portions of the silicon-germanium layer are selectively removed after the laser anneal procedure.
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