Monte Carlo Simulation of Electron Velocity Overshoot in DGSOI MOSFETs

摘要

A comprehensive study of velocity overshoot and the dependences that might be established with technological parameters in symmetrical DGSOI transistors has been carried out. A one-electron Monte Carlo simulator was used to perform this work. It has been proved that velocity overshoot is dominated by the average conduction effective mass. Thus, when the silicon thickness decreases below 5 nm velocity overshoot peak increases showing the opposite behavior to electron mobility.