A simulation-based evolutionary technique for inverse doping profile problem of sub-65 nm CMOS devices

摘要

In this paper, we utilize an evolutionary technique for inverse doping profile problems of the 65 nm complementary metal oxide semiconductor (CMOS) devices. The approach mainly bases upon the process simulation, device simulation, evolutionary strategy, and empirical knowledge. For a set of given measured Ⅰ-Ⅴ curves of the 65 nm CMOS, a developed prototype performs the optimization task to automatically calibrate and inversely search out, for example the doping recipe and device physical model parameters. The simulation-optimization-coupled methodology is complicated theoretically, but our preliminary results imply that it may benefit the development of fabrication technology and can be used for the performance diagnosis, in particular, for sub-65 nm devices.