首页> 外文OA文献 >Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

【2h】

Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

机译：埋沟NmOsFET中掺杂浓度对4H-siC CmOs器件电性能的影响

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Mitsuo Okamotoa; Miwako Iijima; Tsutomu Yatsuo; Kenji Fukuda; Hajime Okumura;
展开▼
作者单位

展开▼
年度 2015
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Structural and electrical properties of HfOxNy and HfO2 gate dielectrics in TaN gated nMOSCAP and nMOSFET devices [J] . Choi KJ, Kim JH, Yoon SG, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2004,第4期

机译：TaN栅极nMOSCAP和nMOSFET器件中HfOxNy和HfO2栅极电介质的结构和电性能
2. Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO₂ thin films for advanced CMOS devices [J] . Vikram Singha* N. Shashanka Dinesh Kumarb amp, R. K. Nahara Radiation Effects and Defects in Solids . 2012,第3期

机译：重离子辐照对射频溅射HfO _{2 薄膜的电学性能的影响}
3. Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation [J] . Heng Yu Xu, Cai Ping Wan, Jin Ping Ao Materials science forum . 2019,第期

机译：高温热氧化改善4H-SiC MOS器件的电性能
4. Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices [C] . Mitsuo Okamoto, Miwako Iijima, Tsutomu Yatsuo, Silicon carbide and related materials 2009 . 2010

机译：埋入沟道NMOSFET中的掺杂浓度对4H-SiC CMOS器件电性能的影响
5. Design, Fabrication, and Characterization of High Performance III-V nMOSFETs for VLSI Beyond Si-CMOS Scaling Limit. [D] . Lee, Sanghoon. 2014

机译：超越Si-CMOS缩放限制的用于VLSI的高性能III-V nMOSFET的设计，制造和表征。
6. Mapping the structural electrical and optical properties of hydrothermally grown phosphorus-doped ZnO nanorods for optoelectronic device applications [O] . Vantari Siva, Kwangwook Park, Min Seok Kim, 2019

机译：绘制水热生长的掺磷的ZnO纳米棒在光电器件中的结构电学和光学性质
7. The effect of doping methods on electrical properties and micromorphology of polysilicon gate electrode in submicron CMOS devices [O] . Ahmad I., Omar A., Mikdad A. 2002

机译：掺杂方法对亚微米CMOS器件中多晶硅栅电极电性能和微观形貌的影响
8. Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications [R] . Neudeck, Philip G., Huang, Wei, Dudley, Michael, 1998

机译：4H-siC器件中的非微管位错：电性能和器件技术的影响

Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices

著录项

引文网络

相似文献

相关主题

期刊订阅