3D Monte Carlo simulation of FinFET and FDSOI devices with accurate quantum correction

摘要

The performance of FinFET and FDSOI devices is compared by 3D Monte Carlo simulation using an enhanced quantum correction scheme. This scheme has two new features: (ⅰ) the quantum correction is extracted from a 2D cross-section of the 3D device and (ⅱ) in addition to using a modified oxide permittivity and a modified work function in subthreshold, the work function is ramped above threshold to a different value in the on-state. This approach improves the accuracy of the quantum-correction for multi-gate devices and is shown to accurately reproduce 3D density-gradient simulation also at short channel lengths. 15 nm FDSOI device performance with thin box and back-gate bias is found to be competitive: compared to a FinFET with (110)/<110> sidewall/channel orientation, the on-current for N-type devices is 25 % higher and the off-current is only increased by a factor of 2.5.