机译:超小型FDSOI,DGSOI和FinFET器件中隧道泄漏机理的多子带集成蒙特卡罗分析
Univ Glasgow, Device Modelling Grp, Sch Engn, Glasgow G12 8LT, Lanark, Scotland|Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Aalto Univ, Dept Neurosci & Biomed Engn, FI-00076 Aalto, Finland;
Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Univ Glasgow, Device Modelling Grp, Sch Engn, Glasgow G12 8LT, Lanark, Scotland;
Univ Granada, Nanoelect Res Grp, Dept Elect & Tecnol Comp, E-18071 Granada, Spain;
Univ Glasgow, Device Modelling Grp, Sch Engn, Glasgow G12 8LT, Lanark, Scotland;
Band-to-band tunneling (BTBT); direct source-to-drain tunneling (S/D tunneling); double-gate silicon on insulator (DGSOI); FinFET; fully depleted silicon on insulator (FDSOI); gate leakage current; multissubband ensemble Monte Carlo (MS-EMC);
机译:FDSOI,DGSOI和FinFET器件中的源-漏隧穿分析,通过多子带集成Monte Carlo进行
机译:具有精确量子校正功能的FinFET和FDSOI器件的3D蒙特卡洛仿真
机译:多子带集成蒙特卡罗仿真器中的带间隧道现象的实现:在硅TFET中的应用
机译:有效质量对超大规模双栅器件中的输运特性和直接源极至漏极隧穿的影响:二维多子带组合蒙特卡洛研究
机译:基于Monte Carlo的集成,针对大功率微波设备应用对氮化镓HEMT进行了仿真分析。
机译:资源匮乏地区的医疗保健生产效率:蒙特卡洛模拟,用于比较数据包络分析,随机距离函数和集成模型的性能
机译:闪烁的FDSOI,DGSOI和FINFET器件中隧道渗漏机制的多相带集合蒙特卡罗分析