Underlap channel silicon-on-insulator quantum dot floating-gate MOSFET for low-power memory applications

摘要

We propose herein the underlap channel silicon-on-insulator (SOI) quantum dot (QD) floating-gate (und-SOIQDFG) metal-oxide-semiconductor field-effect transistor (MOSFET). It is found that, although the reduced effective gate voltage due to the voltage drop across the underlap lengths reduces the on-state drive current (), the increased effective channel length due to the underlap at the gate-source/drain reduces not only the short-channel effects, gate-induced drain leakage, and off-state leakage current () but also the parasitic overlap capacitances of the proposed und-SOIQDFG device. Furthermore, in comparison with the conventional QD floating-gate (conv-QDFG) MOSFET, the capacitive coupling ratio and memory window of the proposed device are improved by and %, respectively. Furthermore, the ratio for the proposed device is improved while the static power dissipation is significantly reduced compared with the conv-QDFG device. This clearly shows that use of the gate-source/drain underlap in the quantum dot floating-gate MOSFET not only eliminates potential weaknesses of the device but also makes it suitable for low-power nanoscale flash memory applications.