Analog performance investigation of dual electrode based doping-less tunnel FET

摘要

In this paper, we have proposed a device and named it dual electrode doping-less TFET (DEDLTFET), in which electrodes on top and bottom of source and drain are considered to enhance the ON state current and Analog performances. The charge plasma technique is used to generate electron's and hole's clouding depending upon their respective work functions at top and bottom of source/drain electrode. Band-to-band-tunneling rate is similar on both sides of source-channel junctions, which increases ON state current. The analog performance parameters of DEDLTFET are investigated and using device simulation the demonstrated characteristics are compared with doping-less (DLTFET) and the conventional doped double gate TFET (DGTFET), such as transconductance (g(m)), transconductance to drain current ratio (g(m)/I-D), output-conductance (g(d)), output resistance (r(d)), early voltage (V-EA), intrinsic gain (A(V)), total gate capacitance (C-gg) and unity gain frequency (f(T)). From the simulation results, it is observed that DEDLTFET has significantly improved analog performance as compared to DGTFET and DLTFET.