Impact of Oxide Engineering on Analog/RF Performance of Doping-Less DMDG MOSFET

摘要

In order to reduce short channel effects, a dual metal concept has been employed in MOSFETs. But to eliminate the problem of a gate tunneling dual material double gate (DMDG) MOSFET is not sufficient. Hence, to overcome gate tunneling oxide engineering technique has been employed in a DMDG MOSFET. In this paper, a doping-less dual material double gate (DL-DMDG) MOSFET has been analyzed using oxide engineering technique. To induce an n-type substrate in a doping-less MOSFET, charge plasma concept has been incorporated. Using 2D ATLAS simulator various analog/RF parameters have been investigated for this device with different oxide materials. The basic purpose of this paper is to improve analog/RF performance of the device and to increase immunity to SCEs.