Method and system for providing dual magnetic tunneling junctions using spin-orbit interaction-based switching and memories utilizing the dual magnetic tunneling junctions

摘要

Magnetic memory is described. The magnetic memory includes double magnetic junctions and a spin orbit interaction (SO) active layer(s). Each of the double magnetic junctions includes a first reference layer, a first nonmagnetic spacer layer, a free layer, a second nonmagnetic spacer layer, and a second reference layer. The free layer is magnetic and is between the nonmagnetic spacer layers. The nonmagnetic spacer layers are between the corresponding reference layers and the free layer. The SO active layer(s) is adjacent to the first reference layer of each double magnetic junction. The SO active layer(s) applies SO torque to the first reference layer due to a current flowing through the SO active layer(s) in a direction perpendicular to the direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment that can be changed by at least SO torque. The free layer can be switched using a spin transfer write current driven through the double magnetic junction.