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METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USING SPIN-ORBIT INTERACTION-BASED SWITCHING AND MEMORIES UTILIZING THE DUAL MAGNETIC TUNNELING JUNCTIONS
METHOD AND SYSTEM FOR PROVIDING DUAL MAGNETIC TUNNELING JUNCTIONS USING SPIN-ORBIT INTERACTION-BASED SWITCHING AND MEMORIES UTILIZING THE DUAL MAGNETIC TUNNELING JUNCTIONS
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机译:利用自旋-轨道相互作用的开关提供双磁隧道结的方法和系统,以及利用双磁隧道结的存储器
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摘要
A magnetic memory is described. The magnetic memory includes dual magnetic junctions and spin-orbit interaction (SO) active layer(s). Each dual magnetic junction includes first and second reference layers, first and second nonmagnetic spacer layers and a free layer. The free layer is magnetic and located between the nonmagnetic spacer layers. The nonmagnetic spacer layers are located between the corresponding reference layers and the free layer. The SO active layer(s) are adjacent to the first reference layer of each dual magnetic junction. The SO active layer(s) exert SO torque on the first reference layer due to a current passing through the SO active layer(s) substantially perpendicular to a direction between the SO active layer(s) and the first reference layer. The first reference layer has a magnetic moment changeable by at least the SO torque. The free layer can be switched using a spin transfer write current driven through the dual magnetic junction.
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