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Leakage Reduction of SRAM-Based Look-Up Table Using Dynamic Power Gating

机译:使用动态电源门控减少基于SRAM的查找表的泄漏

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Leakage power reduction of an SRAM-based look-up table (LUT) in field-programmable gate array (FPGA) has been achieved in this work by implementing an efficient and dynamic power gating technique. The logic of gating is based on the theory of automatically shutting down the power supply to the inactive blocks of LUT during runtime, contrary to all previous works which involved manual intervention for the implementation of power gating. Two techniques of power gating are introduced in this work, PG1 and PG2. PG1 results in more power savings than PG2, however, PG2 has an advantage of low area overhead. Simulation has been carried out for all possible input combinations of LUT, designed in Cadence Virtuoso tool at 45 nm technology. The results indicate a leakage power reduction of up to 50% in PG1 technique, with an average area overhead of 14.15%. The power savings in PG2 is up to 38%, with a minimal increase in area of 1.76%. The power bounce noise is also analyzed for the proposed techniques and reported.
机译:在这项工作中,通过实施一种有效且动态的功率门控技术,已实现了现场可编程门阵列(FPGA)中基于SRAM的查找表(LUT)的泄漏功率降低。门控逻辑基于在运行时自动关闭LUT非活动模块电源的理论,这与以前的所有涉及为实现门控而进行人工干预的工作相反。这项工作介绍了两种电源门控技术,PG1和PG2。 PG1比PG2节省更多的电量,但是PG2的优点是面积开销小。已经使用Cadence Virtuoso工具以45 nm技术对LUT的所有可能输入组合进行了仿真。结果表明,在PG1技术中,泄漏功率降低了50%,平均面积开销为14.15%。 PG2的节电高达38%,而面积的最小增加为1.76%。还针对提出的技术分析了功率弹跳噪声并进行了报告。

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