Monte Carlo simulation of depth and lateral profiles of boron atoms implanted in polycrystalline silicon

摘要

A Monte Carlo calculation technique has been applied to ion implantation. The theory was compared with both the depth distribution of 150‐keV boron implanted in silicon, measured with a secondary‐ion mass spectrometer (Hitachi IMA‐2) and an Auger electron spectrometer (PHI model 5000), and the lateral spread of the implanted boron, measured by Akasaka et al. The results indicate that the theory describes the three‐dimensional distribution of boron implanted in polycrystalline silicon at 150 keV with considerable success.