Annealing of selenium‐implanted GaAs

摘要

The electrical and structural properties of 1×1014 Se+ cm-2, 100–400 kV and 5×1012 Se++ cm-2, 350‐kV implants into (100) semi‐insulating GaAs have been studied. Peak carrier concentrations of 5×1018 cm-3 have been measured and mobilities ≫4000 cm2 V-1 s-1 obtained for low‐dose implants (n=1–2×1017 cm-3) by annealing samples on a graphite strip heater. Si3N4 and AlN have been used as encapsulants. Comparisons are made with capless annealing in an arsine ambient.