METHOD OF ANNEALING GAAS SUBSTRATE AND MANUFACTURE OF GAAS SEMICONDUCTOR DEVICE

摘要

PURPOSE: To provide a method of annealing an ion-implanted GaAs substrate which is high in activation rate and sharp in carrier distribution. ;CONSTITUTION: Si ions are implanted into the surface of a semi-insulating GaAs substrate, 1. Then, an SiO₂ film 8 is formed all the surface of substrate 1 through a thermal CVD method. In succession, the semi-insulating GaAs substrate 1 is annealed at a temperature of 900°C for 10 seconds in an atmosphere of NH₃ through an infrared lamp annealing device The GaAs substrate 1 is annealed in such a manner that the substrate 1 is placed on a carbon boat 1 where a thermocouple monitor is provided making its surface where where the SiO₂ film 8 is formed face upward. By this setup, nitrogen atoms (N) contained in an atmosphere of NH₃ are diffused into the SiO₂ film through its surface, and an ion implanted surface layer 9 is activated.;COPYRIGHT: (C)1993,JPO&Japio