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机译:钨填充硅通孔周围硅中应力的微观测量和建模
Ceramics Division, Material Measurement Laboratory, National Institute of Standards and Technology,Gaithersburg, Maryland 20899, USA,The Pennsylvania State University, State College, Penn- sylvania, 16802, USA;
Ceramics Division, Material Measurement Laboratory, National Institute of Standards and Technology,Gaithersburg, Maryland 20899, USA;
Surface and Microanalysis Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA;
Ceramics Division, Material Measurement Laboratory, National Institute of Standards and Technology,Gaithersburg, Maryland 20899, USA;
Ceramics Division, Material Measurement Laboratory, National Institute of Standards and Technology,Gaithersburg, Maryland 20899, USA;
RF, Analog, and Sensor Group, Freescale Semiconductor, Austin, Texas 78735, USA;
RF, Analog, and Sensor Group, Freescale Semiconductor, Tempe, Arizona, 85284, USA;
Ceramics Division, Material Measurement Laboratory, National Institute of Standards and Technology,Gaithersburg, Maryland 20899, USA;
机译:澄清通过铜填充硅通孔周围硅中的多波长微拉曼光谱法测量的应力场
机译:多波长微拉曼光谱进行热退火后,Cu填充硅的周围硅中的应力演化
机译:极化拉曼光谱测量和有限元模拟研究最后穿通硅通孔的残余应力
机译:澄清通过多波长微拉曼光谱法测量的铜填充硅通孔(tsvs)周围硅中的应力场
机译:对3D集成电路中通过硅通孔的热应力和可靠性的缩放和微观结构效应
机译:穿透硅过孔中W薄膜中应力振荡的X射线纳米衍射分析
机译:拉曼光谱和模拟升高温度下硅通孔硅近表面应力研究