首页> 外文期刊>Journal of Applied Physics >Enhanced upper critical field, critical current density, and thermal activation energy in new ytterbium doped CeFeAsO_(0.9)F_(0.1) superconductor
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Enhanced upper critical field, critical current density, and thermal activation energy in new ytterbium doped CeFeAsO_(0.9)F_(0.1) superconductor

机译:新型掺Ce CeFeAsO_(0.9)F_(0.1)超导体中增强的上临界场,临界电流密度和热活化能

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摘要

In this report, we have investigated the essential physical properties of Ce_(0.7)Yb_(0.3)FeAsO_(0.9)F_(0.1) superconductor such as field dependent critical current density (J_c), thermal activation energy (U_0), and upper critical field (H_(c2)). From the isothermal magnetization curves and size of the superconducting grains, the critical current density J_c of 2.3 × 10~6A/cm~2 at 2K, 0.5 T was estimated using the Bean's model for this Yb doped superconductor. A gradual decrease of J_c and absence of peak effect were found on increasing magnetic field up to 5T. Thermal activation energy (U_0/k_B = ~2500 K) calculated from Arrhenius plots at low magnetic field (0.5 T) indicates a strong flux pinning potential might be co-existing with applied magnetic field. Our results suggest that this new Yb doped superconductor is a possible practical high temperature superconductor under certain magnetic field and temperature.
机译:在本报告中,我们研究了Ce_(0.7)Yb_(0.3)FeAsO_(0.9)F_(0.1)超导体的基本物理特性,例如与场有关的临界电流密度(J_c),热活化能(U_0)和上限临界字段(H_(c2))。根据等温磁化曲线和超导晶粒的尺寸,使用Bean模型对该掺Yb的超导体估计临界电流密度J_c在2K,0.5 T时为2.3×10〜6A / cm〜2。发现在磁场增加到5T时,J_c逐渐减小且没有峰值效应。根据低磁场(0.5 T)下的Arrhenius曲线计算出的热活化能(U_0 / k_B =〜2500 K)表示强磁通钉扎势可能与施加的磁场共存。我们的结果表明,这种新型的掺Yb超导体是在一定磁场和温度下可能的实用高温超导体。

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  • 来源
    《Journal of Applied Physics》 |2013年第4期|043924.1-043924.4|共4页
  • 作者单位

    Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;

    Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;

    Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;

    Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;

    Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;

    Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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