机译:新型掺Ce CeFeAsO_(0.9)F_(0.1)超导体中增强的上临界场,临界电流密度和热活化能
Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;
Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;
Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;
Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;
Centre for High Pressure Research, School of Physics, Bharathidasan University, Tiruchirappalli 620024, India;
Department of Chemistry, Indian Institute of Technology, New Delhi 110016, India;
机译:多晶CeFeAsO_(1-x)F_x超导体中上临界场的掺杂依赖性,超导电流密度和热活化通量流动活化能
机译:CaFFe _(0.9)Co _(0.1)As超导体中的上临界场,临界电流密度和热活化通量
机译:缺砷Lao_(0.9)f_(0.1)feas_(1-δ)超导体转变温度附近的高场Pauli限制行为和上临界磁场增强
机译:NB_2PD中的上临界场(H_(C2))的增强(S_(0.9)TE_(0.1))_ 5超导纤维
机译:晶体各向异性,掺杂,孔隙率和连接性对超导二硼化镁块,线和薄膜的临界电流密度的影响。
机译:Fe(Te0.9Se0.1)薄膜的上临界场和近藤效应的脉冲场测量
机译:掺杂依赖于上临界场,超导电流 密度和热激活通量流动激活能量 多晶CeFeasO1-xFx超导体
机译:超导接近系统的临界电流理论和垂直上临界场