...
机译:AlN势垒厚度对AlN / GaN异质结构场效应晶体管中极化库仑场散射的影响
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
School of Physics, Shandong University, Jinan 250100, China;
School of Physics, Shandong University, Jinan 250100, China;
School of Physics, Shandong University, Jinan 250100, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
机译:AlGaN势垒晶体管中AlGaN势垒厚度对极化库仑场散射的影响
机译:沟道电场分布对AlN / GaN异质结构场效应晶体管中极化库仑场散射的影响
机译:Ino.18Al0.82N / AlN / GaN异质结构场效应晶体管中沟道电场分布对极化库仑场散射的影响
机译:使用低频噪声和电流瞬变方法对In AlN / AlN / GaN异质结构场效应晶体管进行降解分析:热声子效应
机译:AlGaN / GaN异质结构场效应晶体管的工艺开发和表征
机译:表面钝化对超薄AlN / GaN异质结构场效应晶体管中AlN势垒应力和散射机理的影响
机译:沟道电场分布对alGaN / alN / GaN异质结构场效应晶体管中极化库仑场散射的影响
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。