GAN FIELD EFFECT TRANSISTOR INCLUDING ALN BARRIER LAYER, AND METHOD OF MANUFACTURING SUCH FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a novel GaN hetero junction transistor capable of achieving high output, high voltage resistance, high speed, high frequency and the like.;SOLUTION: The above problem is solved by a field effect transistor (1), using a SiN insulating film as an insulating film in particular, including a layer constituting a hetero interface including a channel layer (4) constituted of GaN or InGaN and a barrier layer (5) constituted of AlN and an insulating film (9) formed on a transistor element surface, or by a method for manufacturing such a field effect transistor.;COPYRIGHT: (C)2007,JPO&INPIT