MANUFACTURING METHOD OF GAN LAYER AND NITRIDE BASED HETERO-JUNCTION FIELD EFFECT TRANSISTOR

摘要

PURPOSE: Methods for manufacturing a gallium nitride layer and a nitride based hetero-junction field effect transistor are provided to improve the quality of the semiconductor by planarizing and re-growing the grown surface of the gallium nitride layer. CONSTITUTION: A low temperature buffer layer(20) is formed on the upper surface of a silicon substrate. A first gallium nitride thin film(30) is grown on the surface of the low temperature buffer layer. The grown surface of the gallium nitride thin film is planarized in order to remove the uneven part of the thin film. A second gallium nitride film(40) is re-grown on the surface of the planarized thin film.