机译:氢化物气相外延和高质量ScN外延层的表征
Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;
Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;
Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;
机译:通过氢化物气相外延在Si(111)衬底上生长的GaN外延层的结构和光学表征
机译:通过金属有机气相外延直接在Si(211)衬底上高质量厚CdTe外延层的直接生长,用于核辐射检测和成像。
机译:金属有机气相外延在Si(211)衬底上直接生长高质量CdTe外延层
机译:衬底预处理和缓冲层对氢化物气相外延生长的GaN外延层的影响。
机译:用于未来III-氮化物生长的氢化物气相外延生长GaN衬底的表征
机译:氢化物气相外延生长在AlN纳米图案蓝宝石模板上的AlGaN外延层的结构和应力特性
机译:氢化物气相外延生长的GaN,InGaN,ScN和ScAIN