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机译:原子层沉积技术生长本征和掺铝金红石型TiO_2薄膜的低频介电性能
Microelectronics Technology Laboratory (LTM), Grenoble Alpes University (UGA) and National Center for Scientific Research (CNRS), Grenoble 38000, France,LMOP, El Manor University, Tunis 2092, Tunisia;
Microelectronics Technology Laboratory (LTM), Grenoble Alpes University (UGA) and National Center for Scientific Research (CNRS), Grenoble 38000, France;
Microelectronics Technology Laboratory (LTM), Grenoble Alpes University (UGA) and National Center for Scientific Research (CNRS), Grenoble 38000, France;
Microelectronics Technology Laboratory (LTM), Grenoble Alpes University (UGA) and National Center for Scientific Research (CNRS), Grenoble 38000, France;
Microelectronics Technology Laboratory (LTM), Grenoble Alpes University (UGA) and National Center for Scientific Research (CNRS), Grenoble 38000, France;
LMOP, El Manor University, Tunis 2092, Tunisia;
机译:具有RuO_2电极和Al掺杂金红石TiO_2介电层的原子层沉积生长的金属-绝缘体-金属电容器
机译:Al_2O_3薄膜的热性质及其阻挡层对原子层沉积生长TiO_2薄膜的热光性质的影响
机译:原子层沉积生长Al掺杂ZnO薄膜的形貌和电/光学性质
机译:温度诱导的原子层沉积生长的TiO_2〜Al_2O_3薄膜双层结构的光学性能变化
机译:通过原子层沉积生长的纳米级氧化锆和氧化f电介质:结晶度,界面结构和电性能。
机译:四(二甲基氨基)锆和臭氧原子层沉积生长的高k ZrO2薄膜的结构和介电性能
机译:通过空心 - 阴极等离子体辅助原子层沉积生长AlN薄膜的导电和介电弛豫特性