On the electrostatic control achieved in transistors based on multilayered MoS_2: A first-principles study

摘要

In this work, the electrostatic control in metal-oxide-semiconductor field-effect transistors based on MoS_2 is studied, with respect to the number of MoS_2 layers in the channel and to the equivalent oxide thickness of the gate dielectric, using first-principles calculations combined with a quantum transport formalism. Our simulations show that a compromise exists between the drive current and the electrostatic control on the channel. When increasing the number of MoS_2 layers, a degradation of the device performances in terms of subthreshold swing and OFF currents arises due to the screening of the MoS_2 layers constituting the transistor channel.