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Mechanism of Ag sulfurization resistance improvement by alloying solutes in Ag-based alloy films

机译:Ag基合金膜中溶质的合金化提高Ag抗硫化性能的机理

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摘要

The Ag sulfurization resistance of the pure Ag film and four Ag-based alloy films was evaluated by the reflectance decay after the Ag sulfurization test. Among all Ag-based alloy films, the In alloying solute in the Ag-In alloy film shows the best resistance to the Ag sulfurization. Using x-ray photoelectron spectroscopy analysis, the chemical state of the alloying solutes in the Ag-based alloy films was examined. It is found that, with being alloyed in the Ag matrix phase, the 3d(5/2) core-level peak positions of the alloying solutes (In, Sn, and Pd) shift toward the lower binding energy region, which is defined as a negative chemical shift. The chemical shifts of In, Sn, and Pd alloying solutes are -0.31 eV, -0.23 eV, and -0.2 eV, respectively. The absolute value of the negative chemical shift represents the tendency of Ag atoms losing valence electrons to the alloying solutes. As the Ag atoms lose valence electrons to the alloying solutes, the Ag atoms have a less tendency to provide the valence electrons to form covalent bonding with S atoms, which suppresses the Ag sulfurization reaction (2Ag + S - Ag2S). Therefore, the larger the absolute value of the negative chemical shift, the higher is the reflectance decay (lesser Ag sulfurization resistance). Published by AIP Publishing.
机译:通过Ag硫化试验后的反射率衰减来评价纯Ag膜和4个Ag基合金膜的Ag耐硫化性。在所有基于Ag的合金膜中,Ag-In合金膜中的In合金溶质表现出对Ag硫化的最佳耐受性。使用x射线光电子能谱分析,检查了Ag基合金膜中合金溶质的化学状态。发现,在Ag基体相中进行合金化后,合金溶质(In,Sn和Pd)的3d(5/2)核心能级峰位置移向较低的结合能区,定义为负化学位移。 In,Sn和Pd合金溶质的化学位移分别为-0.31 eV,-0.23 eV和-0.2 eV。负化学位移的绝对值表示Ag原子使价电子失去合金溶质的趋势。由于Ag原子失去价电子给合金溶质,因此Ag原子提供价电子与S原子形成共价键的趋势较小,从而抑制了Ag的硫化反应(2Ag + S-> Ag2S)。因此,负化学位移的绝对值越大,反射率衰减越高(Ag耐硫化性越小)。由AIP Publishing发布。

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  • 来源
    《Journal of Applied Physics》 |2018年第24期|245305.1-245305.8|共8页
  • 作者单位

    Natl Cent Univ, Dept Chem & Mat Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan;

    Natl Cent Univ, Dept Chem & Mat Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan;

    Natl Cent Univ, Dept Chem & Mat Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan;

    Natl Cent Univ, Dept Chem & Mat Engn, 300 Zhongda Rd, Taoyuan 32001, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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