Realization of 340-nm-Band High-Output-Power ( > 7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN

Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama

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Realization of 340-nm-Band High-Output-Power ( > 7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN

机译：实现340-NM波段高输出功率（> 7MW）inalGan量子孔紫外线发光二极管，P型InalGaN

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摘要

We have demonstrated 340-nm-band high-output-power InAlGaN quantum well (QW) ultraviolet (UV) light-emitting diodes (LEDs) under room temperature (RT) continuous wave (CW) operation, which were deposited on sapphire (0001) substrates by low-pressure metal

机译：我们已经在室温（RT）连续波（CW）操作下展示了340-NM波段的高输出功率inalAlaum井（QW）紫外（UV）发光二极管（LED），其在蓝宝石上沉积（0001 ）低压金属的基材

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《Japanese journal of applied physics》 |2008年第42期|2941-2944|共4页
作者
Sachie Fujikawa; Takayoshi Takano; Yukihiro Kondo; Hideki Hirayama;
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正文语种 eng
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关键词
UV-LED; MOCVD; InAlGaN; AIGaN; AIN;

机译：紫外线;MOCVD;inalgan;AIGAN;AIN.;

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专利

1. 340 nm-band high-power InAlGaN quantum well ultraviolet light-emitting diode using p-type InAlGaN layers [J] . Sachie Fujikawa, Takayoshi Takano, Yukihiro Kondo, Physica status solidi . 2008,第6期

机译：使用p型InAlGaN层的340 nm波段大功率InAlGaN量子阱紫外发光二极管
2. Realization of 340 nm-band high-power InAlGaN-based ultraviolet light-emitting diodes by the suppression of electron overflow [J] . Sachie Fujikawa, Takayoshi Takano, Yukihiro Kondo, Physica status solidi . 2008,第6期

机译：通过抑制电子溢流实现340 nm波段大功率InAlGaN基紫外发光二极管
3. Quaternary InAlGaN quantum-dot ultraviolet light-emitting diode emitting at 335 nm fabricated by anti-surfactant method [J] . Hideki Hirayama, Sachie Fujikawa Physica status solidi . 2008,第6期

机译：通过抗表面活性剂方法制备的335nm发光的四元InAlGaN量子点紫外发光二极管
4. InAlGaN optical emitters - laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes [C] . Christopher Chua, Zhihong Yang, Clifford Knollenberg, Gallium nitride materials and devices VI . 2011

机译：InAlGaN光学发射器-具有非外延包覆层的激光二极管和紫外发光二极管
5. Enhancement of Internal Quantum Efficiency and Optical Gain for Nitride Light-Emitting Diodes and Laser Diodes. [D] . Zhao, Hongping. 2011

机译：增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
6. Effects of Meshed p-type Contact Structure on the Light Extraction Effect for Deep Ultraviolet Flip-Chip Light-Emitting Diodes [O] . Yuxin Zheng, Yonghui Zhang, Ji Zhang, 2019

机译：网格化p型接触结构对深紫外倒装芯片发光二极管光提取效果的影响
7. Enhanced ultraviolet emission of MgZnO/ZnO multiple quantum wells light-emitting diode by p-type MgZnO electron blocking layer [O] . Yong-Seok Choi, Jang-Won Kang, Byeong-Hyeok Kim, 2013

机译：通过P型MGZNO电子阻挡层增强MgZnO / ZnO多量子阱发光二极管的紫外线发光二极管
8. Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range [R] . Avrutin, V., Silversmith, D., Morkoc, H. 2009

机译：ZnO掺杂不对称问题：现状与展望。实现和实现p型ZnO的实验和理论努力的回顾，适用于蓝/紫外光谱范围的发光光电器件

Realization of 340-nm-Band High-Output-Power ( > 7mW) InAlGaN Quantum Well Ultraviolet Light-Emitting Diode with p-Type InAlGaN

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