InAlGaN p-n Fabrication method of InAlGaN p-n diode

摘要

PURPOSE: A manufacturing method of AlGaInN system p-n diode is provided to be capable of forming NH3 radical having very high reactivity as well as growing good GaN by using nitrogen precursor of hydrazine system, and be capable of minimizing hydrogen passivation due to formation of Mg-H complex. CONSTITUTION: When a p-Al(x)Ga(y)N:Mg layer(x+y=1, 0x1, 0y1) is being grown by a MOCVD(Metal Organic Chemical Vapor Deposition) technique of an AlGaInN system p-n diode, nitrogen precursor is used as a hydrazine system source and nitrogen is used as carrier gas. In this state, dimethylhydrazine, tertiarybutilhydrazine and monomethylhydrazine, etc are used as the hydrazine system source.