Investigation of the Equivalent Circuit and Carrier Lifetimes of Si/SiGe Heterostructure P-N Diodes for Frequencies Between 0.5 and 18.5 MHz (Undersoekning av Ekvivalenta Kretsen Samt Laddningsbaerarnas Livslaengder f r Frekvenser Mellan 0,5 och 18,5 MHz i Si/SiGe Baserade Heterostruktur-Dioder av P-N Typ)

摘要

The use of semiconductor heterostructures and heterojunctions, today plays an important part in the development of superior electronic devices. Recently much interest has been focused on Si(x)Ge(1-x)/Si junctions. Such a structure, doped as a P-N junction, has been investigated in the work. The authors have also developed a method for measuring the lifetime of minority carriers in such structures. The method uses an Automatic Network Analyzer (ANA) in combination with computer modelling. As a result of these measurements, they have been able to determine the lower limit of the lifetime for holes in a thin layer of Si(0.9)Ge(0.1) to 0.80 plus or minus 0.53 microseconds.