Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA;
cladding; UV LED; nitride; laser diode;
机译:使用p型InAlGaN层的340 nm波段大功率InAlGaN量子阱紫外发光二极管
机译:通过使用晶格匹配的InAlGaN作为有源区中的阻挡层来改善近紫外发光二极管的光
机译:四元InAlGaN多量子阱有源层中残留的氧杂质对GaN衬底上紫外发光二极管发射效率的影响
机译:InalGAN光发射器 - 具有非外延包层和紫外发光二极管的激光二极管
机译:增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
机译:图案化双层ITO改善了激光发光二极管的紫外发光二极管的光输出
机译:基于Algan的深紫外发光二极管的奇妙光学性能与基于内仑的最后量子屏障和步进电子阻挡层