Fabrication of Hf(C)N Films on SiO_2 by Metal Organic Chemical Vapor Deposition (MOCVD) Using TDEAHf Precursor

摘要

Hafnium carbonitride Hf(C)N was fabricated as a gate metal electrode on SiO_2 by the metal organic chemical vapor deposition (MOCVD) technique with tetrakis-diethylamido-hafnium Hf[N(C_2H_5)_2]_4 (TDEAHf) precursor. The chemical composition and electrical resistance of the films were evaluated using X-ray photoelectron spectroscopy (XPS) and four-point probe techniques, respectively. NH_3-free growth with H_2 carrier gas proved an effective method to fabricate metallic Hf(C)N films, although the composition and electrical properties of the films strongly depended on the growth temperature. Above 600℃, the resistivity decreased to about 10~4 μΩ-cm. Based on the chemical analysis by XPS, the formation of HfN_x and HfC_x resulted in metallic characteristic in the fabricated films.