Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

摘要

Both lowering the "reset" current of resistance random access memory (ReRAM) and raising the resistance in the low resistance state are crucial for practical use of ReRAM. These requirements have been satisfied by using a hetero junction structure consisting of transition metal oxides, NiO_y/TiO_x/Pt, combining direct contact with the NiO_y, using a W-probe. It is considered that this configuration brought about extreme downsizing of the effective area of both the top and bottom electrodes for NiO_y, and thus decreased the number of filaments formed in "forming" process. Reducing the number of filaments is essential to these issues.