Pulse Switching Property of Reset Process in Resistive Random Access Memory (ReRAM) Consisting of Binary-Transition-Metal-Oxides

摘要

For high speed switching of ReRAM, we must elucidate a dominant parameter to control switching speed for a reset process (t_(reset)). Since t_(reset) is not necessarily determined by only one parameter, we proposed a method to get reset parameters which are expected to be related to t_(reset), low resistance, applied voltage and filament temperature (T_(reset)), from a same experimental data. The estimated reset parameters of Pt/NiO/Pt structures show that t_(reset) is dominantly dependent on T_(reset), considering the direction of oxygen ions migration in set and reset processes. A possibility that T_(reset) was underestimated due to decrease in resistance of NiO surrounding the neighborhood of filament by Joule heating was discussed.