Highly Reliable Cu Interconnect Using Low-Hydrogen Silicon Nitride Film Deposited at Low Temperature as Cu-Diffusion Barrier

摘要

We demonstrated highly reliable Cu interconnects using a high-quality silicon nitride film grown at temperatures below 300℃. The low-temperature silicon nitride (LT-SiN) film, which was used as a Cu-diffusion barrier layer and a final passivation layer, w