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High Coplanarity and Fine Pitch Copper Pillar Bumps Fabrication Method

机译:高共面性和细间距铜柱凸点的制作方法

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摘要

In this paper, we report a novel plating-friendly polishing mechanism for fabrication of high coplanarity and high density lead-free copper pillar bumps for advanced packaging applications. The final experimental results showed that the uniformity in wafer (UIW) could be sharply improved from 4.31% after plating to 2.88% after polishing and even to 2.54% after reftow throughout the entire 4 inch wafer.
机译:在本文中,我们报告了一种新颖的电镀友好抛光机制,用于制造用于高级封装应用的高共面性和高密度无铅铜柱凸点。最终的实验结果表明,在整个4英寸晶圆中,晶圆的均匀度(UIW)可以从电镀后的4.31%大幅提高到抛光后的2.88%,甚至在回流后甚至可以提高到2.54%。

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  • 来源
    《Applied physics express》 |2010年第6issue2期|P.06GN07.1-06GN07.3|共3页
  • 作者单位

    Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao E. Rd, Taipei 106, Taiwan;

    Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao E. Rd, Taipei 106, Taiwan;

    Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao E. Rd, Taipei 106, Taiwan;

    Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao E. Rd, Taipei 106, Taiwan;

    Institute of Mechanical and Electrical Engineering, National Taipei University of Technology, 1, Sec. 3, Chung Hsiao E. Rd, Taipei 106, Taiwan;

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