Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO-3 Insulator

摘要

Strontium titanate (SrTiO-3) thin film with a dielectric constant of e, = 12.1 prepared on a heavily doped n-type silicon wafer by sputtering. Both pentacene and C-60 field-effect transistors fabricated using the self-assembled monolayer (SAM)-free SrTiO-3 as an insulator showed well-saturated output characteristics at a driving voltage as low as —3 or 3 V. Hole mobility of the pentacene-FET was 0.28 cm~2 V~-1 s~-1, while electron mobility of the C-60-FET was 0.09 cm~2 V~-1 s~-1.