Fully Room-Temperature-Fabricated Low-Voltage Operating Pentacene-Based Organic Field-Effect Transistors With HfON Gate Insulator

摘要

Low-voltage operating pentacene-based organic field-effect transistors (OFETs) with a HfON gate insulator have been fabricated with a fully room-temperature process. Despite its thin capacitance equivalent thickness of 3.3 nm, the room-temperature-processed HfON gate insulator shows a low leakage current density of $hbox{7} times hbox{10}^{-7} hbox{A/cm}^{2}$ at a gate voltage of $-$2 V. Moreover, the fully room-temperature-fabricated OFET (channel $W/L = hbox{1650/100} muhbox{m}$ ) shows a low subthreshold swing of 0.12 V/decade, a large on/off-current ratio of $hbox{6.8} times hbox{10}^{4}$, a threshold voltage of $-$0.5 V, and a hole mobility of 0.25 $hbox{cm}^{2}/hbox{V}cdothbox{s}$ at an operating voltage of $-$2 V.