Low temperature curable organic gate insulator for organic field-effect transistors

摘要

Low-temperature curable organic insulator was prepared through blending of polyimide type base resin and cross-linking agent. The newly developed resin can be formed into films using a wet process and cured at 130℃. Using the low temperature cured film as the gate dielectric layer, the field effect mobility of 0.15 cm~2/V·s was obtained from a pentacene field effect transistor in the saturation regime and no hysteresis behavior was observed in transfer curves.