Characteristics of 4H-SiC n- and p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ion-Implanted Buried Channel

摘要

We investigated the electrical characteristics of 4H-SiC n- and p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with ion-implanted buried channels. The effects of the impurity concentrations of the buried channel (C_(bc)) on their electrical characteristics were quite different. In the case of n-channel MOSFETs, the threshold voltage decreased and the channel mobility increased with an increase in C_(bc). On the other hand, in the case of p-channel MOSFETs, the threshold voltage and the maximum channel mobility were almost independent of C_(bc). The conduction mechanism of the buried-channel MOSFETs is discussed in this paper.