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机译:通过选择性区域金属有机气相外延在InP(111)A衬底上形成的富铟InGaP纳米线
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics,Hokkaido University, Sapporo 060-8628, Japan;
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics,Hokkaido University, Sapporo 060-8628, Japan;
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics,Hokkaido University, Sapporo 060-8628, Japan,Japan Science and Technology Agency-PRESTO, Kawaguchi, Saitama 332-0012, Japan;
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics,Hokkaido University, Sapporo 060-8628, Japan;
机译:通过选择性区域金属有机气相外延在InP(111)衬底上形成InP和InGaAs气孔阵列
机译:选择性区域金属有机气相外延在GaAs(111)B上形成InGaAs纳米线的生长和表征
机译:InGaAs / InP多量子孔纳米线通过选择区金属有机气相外延生长的径向生长演化
机译:选择性区域冶金液相外延制造的Si掺杂INP纳米线的光致发光光谱研究
机译:通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学
机译:选择性区域金属有机气相外延对位置控制的III–V化合物半导体纳米线太阳能电池
机译:小于50 nm宽度的沟槽中的选择性区域金属有机气相外延对InP在Si(001)上的异质外延:成核层和凹槽工程的作用