机译:InGaAs / InP多量子孔纳米线通过选择区金属有机气相外延生长的径向生长演化
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Monash Univ Monash Ctr Electron Microscopy 10 Innovat Walk Clayton Vic 3800 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Australian Natl Fabricat Facil Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Australian Natl Fabricat Facil Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Res Sch Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Monash Univ Monash Ctr Electron Microscopy 10 Innovat Walk Clayton Vic 3800 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
Australian Natl Univ Dept Elect Mat Engn Res Sch Phys &
Engn Canberra ACT 2601 Australia;
III-V compound semiconductors; selective-area epitaxy; MOVPE; nanowires; InGaAs/InP quantum wells; growth mechanism;
机译:InGaAs / InP多量子孔纳米线通过选择区金属有机气相外延生长的径向生长演化
机译:生长温度对选择性区域金属有机气相外延中InGaAs纳米线生长的影响
机译:选择性区域金属有机气相外延中两步生长方法实现的30nm直径InGaAs纳米线阵列的间距独立实现。
机译:用于先进CMOS器件的Si上InGaAs / InP杂结构的选择性区域金属有机气相外延
机译:利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
机译:选择性区域金属有机气相外延对位置控制的III–V化合物半导体纳米线太阳能电池
机译:生长温度对InGaAs纳米线在选择性区域金属有机气相外延生长的影响
机译:通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。