Side deposition method of metal catalyst for horizontal growth of nanowires and method of manufacturing horizontally grown nanowires using the same

摘要

The present invention relates to a side deposition method of a metal catalyst for horizontal growth of nanowires and a method of manufacturing a nanowire grown horizontally using the same, and more particularly, by selectively etching different kinds of thin films stacked on a substrate. By allowing the selective deposition of a catalyst for growth on the side of the pattern layer of the thin film, the nanowires can be grown in a horizontal direction, and thus a method for more efficiently manufacturing horizontally grown nanowires. According to the present invention, it is possible to manufacture nanowires grown in the horizontal direction even without using a growth inhibitory layer, so that nanowires necessary for the production of horizontal devices can be manufactured more efficiently, which can be applied to various devices such as diodes. It is possible.