机译:选择性区域金属有机气相外延在GaAs(111)B上形成InGaAs纳米线的生长和表征
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
rnResearch Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
rnResearch Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
rnResearch Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
rnResearch Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
rnResearch Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, North 14, West 9, Sapporo 060-0814, Japan;
机译:InGaAs纳米线-顶栅场效应晶体管的选择性区域金属有机气相外延电学表征
机译:生长温度对选择性区域金属有机气相外延中InGaAs纳米线生长的影响
机译:GaAsP / GaAs垂直异质结构纳米线中埋入的GaAs量子的生长和表征的选择性区域金属有机气相外延。
机译:金属有机气相外延在(111)A GaAs上生长的压电InGaAs / GaAs / AlGaAs量子阱激光器
机译:利用金属有机分子束外延生长和表征高速掺C的基极InP / InGaAs异质结双极晶体管。
机译:选择性区域金属有机气相外延对位置控制的III–V化合物半导体纳米线太阳能电池
机译:生长温度对InGaAs纳米线在选择性区域金属有机气相外延生长的影响